The role of Schottky barrier in the resistive switching of SrTiO3: direct experimental evidence

Single crystalline SrTiO 3 doped with 0.1 wt% Nb was used as a model system to evaluate the role of the Schottky barrier in the resistive switching of perovskites. The Ti bottom electrode formed an ohmic contact in the Ni/Nb:SrTiO 3 /Ti stack, whereas the Ni top electrode created a strong Schottky b...

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Published inPhysical chemistry chemical physics : PCCP Vol. 17; no. 1; pp. 134 - 137
Main Authors Yin, Xue-Bing, Tan, Zheng-Hua, Guo, Xin
Format Journal Article
LanguageEnglish
Published England 07.01.2015
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Summary:Single crystalline SrTiO 3 doped with 0.1 wt% Nb was used as a model system to evaluate the role of the Schottky barrier in the resistive switching of perovskites. The Ti bottom electrode formed an ohmic contact in the Ni/Nb:SrTiO 3 /Ti stack, whereas the Ni top electrode created a strong Schottky barrier, which was reflected in a huge semi-circle in the impedance spectrum of the stack. Bipolar switching was achieved in the voltage range of −4 to 4 V for the stack, two clear resistance states were created by electric pulses, and the Schottky barrier heights corresponding to the high/low resistance states were experimentally determined. A direct relationship between the resistance state and the Schottky barrier height was thus established. Different Schottky barrier heights are responsible for the different resistance states in the metallic electrode/donor-doped SrTiO 3 stack.
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ISSN:1463-9076
1463-9084
DOI:10.1039/c4cp04151h