Pressure effect on CH3NH3PbBr3 perovskite films deposited by close space sublimation for PIN diode and its possible application in radiation detector

• Published in: Materials science in semiconductor processing Vol. 110; p. 104965
• Main Authors: Martínez-Falomir, Gibrán G., Lopez-Lazcano, C.A., Almaral-Sánchez, J.L.
• Format: Journal Article
• Language: English
• Published: Elsevier Ltd 01.05.2020
• Subjects: CSS; Diode application; MAPbBr3 perovskite; Pressure effect; Diode application; CSS; Pressure effect; MAPbBr3 perovskite
• ISSN: 1369-8001; 1873-4081
• DOI: 10.1016/j.mssp.2020.104965

In this work, methylammonium lead bromide (CH3NH3PbBr3) perovskite films are deposited by close space sublimation (CSS), by two steps, the first layer is lead bromide (PbBr2) and the second is methylammonium bromide (MABr). Pressure effect on the films, from 1000 psi to 5000 psi at 100 °C temperature, was studied. Perovskite films were characterized by XRD, UV–Vis, SEM, AFM, PESA and Kelvin probe. The results show a cubic structure perovskite (XRD), band gap of 2.28 eV (UV–Vis), 3 μm thickness and uniform grain distribution (SEM), roughness reduction from 118 nm to 6 nm (AFM), valence band of 5.0 eV (PESA) and work function from 4.8 to 5 eV (Kelvin probe). These properties could allow to use as radiation detector diode. •Perovskite films at 3 μm thick deposited by close space sublimation.•Perovskite effect at differents conditions annealing.•Morphologic effect in grain size by using hot press system (SEM).•Roughness decreased from 118 nm to 6 nm using the hot press system at 100 °C-5000 psi.•To obtain an acceptable diode behaviour with more than 2 orders of magnitude in rectification.