Effect of monatomic and molecular ion irradiation on time resolved photoluminescence decay in GaN
Optical effects induced in silicon-doped wurtzite (0001) GaN epilayers by keV monatomic and molecular ion irradiation were experimentally investigated. Results were analyzed together with data on structure defect formation. In all the cases under consideration, an increase in the collision cascade d...
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| Published in | Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms Vol. 458; pp. 164 - 168 |
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| Main Authors | , , , , |
| Format | Journal Article |
| Language | English |
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Elsevier B.V
01.11.2019
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| Abstract | Optical effects induced in silicon-doped wurtzite (0001) GaN epilayers by keV monatomic and molecular ion irradiation were experimentally investigated. Results were analyzed together with data on structure defect formation. In all the cases under consideration, an increase in the collision cascade density (the cases of molecular and heavy atomic ion bombardment) enhances the stable damage accumulation rate and, accordingly, intensifies quenching of luminescence. The processes of PL suppression were theoretically considered as an increase of surface recombination rate of nonequilibrium photo-excited charge carriers due to production of stable damage at the irradiated subsurface layer. It is shown that carrier diffusion determines PL decay time shortening in the shallow implantation cases studied. |
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| AbstractList | Optical effects induced in silicon-doped wurtzite (0001) GaN epilayers by keV monatomic and molecular ion irradiation were experimentally investigated. Results were analyzed together with data on structure defect formation. In all the cases under consideration, an increase in the collision cascade density (the cases of molecular and heavy atomic ion bombardment) enhances the stable damage accumulation rate and, accordingly, intensifies quenching of luminescence. The processes of PL suppression were theoretically considered as an increase of surface recombination rate of nonequilibrium photo-excited charge carriers due to production of stable damage at the irradiated subsurface layer. It is shown that carrier diffusion determines PL decay time shortening in the shallow implantation cases studied. |
| Author | Titov, A.I. Ermolaeva, G.M Karaseov, P.A. Karabeshkin, K.V. Shilov, V.B. |
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| Cites_doi | 10.1088/0953-8984/16/29/R02 10.1016/j.nimb.2009.05.059 10.1134/S1063782616080145 10.1080/00337577308232616 10.1016/j.vacuum.2016.01.011 10.1103/PhysRevB.55.9571 10.1063/1.1868059 10.1016/j.sse.2015.04.010 10.1088/0268-1242/29/8/084004 10.1016/j.nimb.2006.12.004 10.1063/1.3212555 10.1088/1361-6463/aa97ab 10.1016/S0921-4526(02)01209-7 10.1016/j.nimb.2011.12.029 10.1103/PhysRevB.56.R10020 10.1016/S0927-796X(01)00028-6 10.1134/S1063782614040125 10.1063/1.4829904 10.1209/0295-5075/97/68004 10.1063/1.2143120 10.1063/1.2801404 |
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| Keywords | Ion implantation GaN Time-resolved PL Photoluminescence Charge carrier diffusion Radiation damage Collision cascade density |
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| SubjectTerms | Charge carrier diffusion Collision cascade density GaN Ion implantation Photoluminescence Radiation damage Time-resolved PL |
| Title | Effect of monatomic and molecular ion irradiation on time resolved photoluminescence decay in GaN |
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