Effect of monatomic and molecular ion irradiation on time resolved photoluminescence decay in GaN

Optical effects induced in silicon-doped wurtzite (0001) GaN epilayers by keV monatomic and molecular ion irradiation were experimentally investigated. Results were analyzed together with data on structure defect formation. In all the cases under consideration, an increase in the collision cascade d...

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Published inNuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms Vol. 458; pp. 164 - 168
Main Authors Titov, A.I., Karaseov, P.A., Karabeshkin, K.V., Ermolaeva, G.M, Shilov, V.B.
Format Journal Article
LanguageEnglish
Published Elsevier B.V 01.11.2019
Subjects
Charge carrier diffusion
Collision cascade density
GaN
Ion implantation
Photoluminescence
Radiation damage
Time-resolved PL
Ion implantation
GaN
Time-resolved PL
Photoluminescence
Charge carrier diffusion
Radiation damage
Collision cascade density
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Summary:Optical effects induced in silicon-doped wurtzite (0001) GaN epilayers by keV monatomic and molecular ion irradiation were experimentally investigated. Results were analyzed together with data on structure defect formation. In all the cases under consideration, an increase in the collision cascade density (the cases of molecular and heavy atomic ion bombardment) enhances the stable damage accumulation rate and, accordingly, intensifies quenching of luminescence. The processes of PL suppression were theoretically considered as an increase of surface recombination rate of nonequilibrium photo-excited charge carriers due to production of stable damage at the irradiated subsurface layer. It is shown that carrier diffusion determines PL decay time shortening in the shallow implantation cases studied.
ISSN:0168-583X
1872-9584
DOI:10.1016/j.nimb.2018.11.049