Identification and implication of a perimeter tunneling current component in advanced self-aligned bipolar transistors

• Published in: IEEE transactions on electron devices Vol. 35; no. 1; pp. 89 - 95
• Main Authors: Li, G.P., Hackbarth, E., Chen, T.-C.
• Format: Journal Article
• Language: English
• Published: New York, NY IEEE 01.01.1988; Institute of Electrical and Electronics Engineers
• Subjects: Applied sciences; Area measurement; Bipolar transistors; Current measurement; Diodes; Electronics; Exact sciences and technology; Leakage current; Performance analysis; Resistance heating; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Temperature; Transistors; Tunneling; Voltage; Transistor; Electric current; Tunnel effect; Self aligned technology
• ISSN: 0018-9383; 1557-9646
• DOI: 10.1109/16.2420

The identification of a perimeter tunneling current in the base-emitter junction of advanced double-poly self-aligned bipolar transistors has been verified by measuring based current as a function of temperature, bias voltage, and device perimeter-to-area ratio. The perimeter tunneling current at forward bias is found to be predominantly an excess tunneling that depends on the sidewall oxide interface properties, while that at reverse bias is due to band-to-band tunneling resulting from the emitter and extrinsic base profile overlap. Based on experimental results and an analysis of base-leakage-current trade-offs at forward and reverse bias, a device design concept was developed to enhance device performance and processing yield in scaled bipolar transistors.< >