Analytical modelling and simulation of negative capacitance junctionless FinFET considering fringing field effects

• Published in: Superlattices and microstructures Vol. 155; p. 106929
• Main Authors: Kaushal, Shelja, Rana, Ashwani K.
• Format: Journal Article
• Language: English
• Published: Elsevier Ltd 01.07.2021
• Subjects: Drain induced barrier lowering (DIBL); Ferroelectric (FE); Junctionless (JL); Negative capacitance (NC); Short channel effects (SCEs); Negative capacitance (NC); Junctionless (JL); Ferroelectric (FE); Short channel effects (SCEs); Drain induced barrier lowering (DIBL)
• ISSN: 0749-6036; 1096-3677
• DOI: 10.1016/j.spmi.2021.106929

This article proposes an analytical model for channel potential and threshold voltage for negative capacitance junctionless FinFET (NC-JL FinFET). The Poisson's equation has been solved in collaboration with Landau–Khalatnikov equation to obtain analytical model for electrostatic potential distribution, threshold voltage and DIBL. The effect of fringing field on the potential distribution function due to source/drain spacer has also been taken into consideration. The results of proposed models are also validated and compared with simulated results of Sentaurus TCAD device simulator. The effect of various physical parameters like thickness of ferroelectric layer, fin thickness, spacer length, gate dielectric constant etc. on the performance of device has been studied. Further, the performance is also examined for different technology nodes and its (in context of) SCEs. •NC effect in JL FinFET has relaxed the high gate work function requirement.•Analytical model for NC-JL FinFET threshold voltage and DIBL has been developed.•Effect of fringing field lines are also taken into consideration.•NC-JL FinFET shown improved performance even for short channel devices.•It showed excellent performance with negative DIBL and negligible SCEs.