MoS2 hydrogen evolution catalysis on p-Si nanorod photocathodes
We report on the synthesis of few−layers MoS2 flakes coated on the p−Si nanorods (p−SiNRs) via the metalorganic chemical vapor deposition (MOCVD) method. The MoS2 flakes show a vertically−standing, few−layers (10–15) morphology. The photoluminescence characteristic of the MoS2/p−SiNRs heterojunction...
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Published in | Materials science in semiconductor processing Vol. 121; p. 105308 |
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Main Authors | , , , , , , , , , , , , |
Format | Journal Article |
Language | English |
Published |
Elsevier Ltd
01.01.2021
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Subjects | |
Online Access | Get full text |
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Summary: | We report on the synthesis of few−layers MoS2 flakes coated on the p−Si nanorods (p−SiNRs) via the metalorganic chemical vapor deposition (MOCVD) method. The MoS2 flakes show a vertically−standing, few−layers (10–15) morphology. The photoluminescence characteristic of the MoS2/p−SiNRs heterojunction exhibits a blue−shift energy bandgap (1.65−1.78 eV) at temperature of 77 K with thinner MoS2 layers due to the quantum confinement effect. As a result, the fabricated MoS2/p−SiNRs photocathode results in a saturated photocurrent density (PCD) and a photoconversion efficiency (η) of 42.3 mA cm−2, and 0.64% at 0 V (vs. RHE), respectively. Due to the built−in potential of heterojunction and more active edge sites, the onset voltage of the MoS2/p−SiNRs sample was positively shifted to ~0.72 V (vs. RHE). Based on this finding, we suggest that a heterojunction structure might serve an approach for fabricating the hybrid photoelectrochemical (PEC) device of the Si−based material.
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•Vertical-standing few-layer MoS2/p- Si nanorods were synthesized by the chemical etching, and CVD methods.•Photocurrent density and photoconversion efficiency of MoS2/p-Si nanorod-based photoelectrochemical cell (PEC) obtains 42.3 mA.cm-2, and 0.64%, respectively•The PEC device exhibits a positive onset potential of 0.72 V (vs. RHE) and the saturation current density is close to the JSC of the ideal solar cell. |
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ISSN: | 1369-8001 1873-4081 |
DOI: | 10.1016/j.mssp.2020.105308 |