Hall current influence of microtemperature magneto-elastic semiconductor material

• Published in: Superlattices and microstructures Vol. 139; p. 106428
• Main Authors: Lotfy, Kh, El-Bary, A.A., Hassan, W., Ahmed, M.H.
• Format: Journal Article
• Language: English
• Published: Elsevier Ltd 01.03.2020
• Subjects: Hall current; Laplace transform; Magnetic field; Microtemperature; Photothermal theory; Thermoelasticity; Hall current; Photothermal theory; Thermoelasticity; Laplace transform; Magnetic field; Microtemperature
• ISSN: 0749-6036; 1096-3677
• DOI: 10.1016/j.spmi.2020.106428

In this paper, the effect of Hall current of elastic semiconductor medium is studied, when the medium is exposed to very strong magnetic field. The overlapping between the magnetic field and microelements (microstructure) of the medium is investigated. The microtemperatures of the medium are generated during photothermal transport excitation. The interaction between elastic-magnetic-plasma-thermal waves is studied in one dimension when semiconductor rod is used. The Laplace integral transform is used to solve the governing equations in microtemperature field. The exact solutions of physical field quantities are obtained in physical time domain when they are applied a thermal shock and some mechanical boundary conditions at the free surface of the medium in context of recombination plasma process. The inversion of Laplace transform is used to get the complete solutions of main physical variables. Some comparisons are carried out under the effect of Hall current and microtemperature effect. The numerical results are displayed graphically and discussed theoretically. •A novel model with the effect of Hall current on elastic semiconductor medium is studied.•The overlapping between the magnetic field and microelements (microstructure) of the medium is investigated.•The problem is study in the context of many thermal memories.•Some new parameters will be appearing.