Effect of rare-earth elements on luminescence properties of ZnSe-based Chalcogenide scintillators

Afterglow in two types of semiconductor scintillators, ZnSe(Te) and ZnSe(O,Al), after pulsed X-ray excitation is studied. It is demonstrated that the afterglow can be significantly reduced by annealing in a zinc-rich atmosphere and co-doping by rare-earth elements. The co-doping also decreases the l...

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Bibliographic Details
Published inNuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment Vol. 622; no. 1; pp. 139 - 141
Main Authors Katrunov, K.A., Starzhinskiy, N.G., Malyukin, Yu.V., Silin, V.I., Zenya, I.M., Tamulaitis, G.
Format Journal Article
LanguageEnglish
Published Elsevier B.V 01.10.2010
Subjects
Afterglow
Chalcogenide scintillators
Rare-earth elements
Rare-earth elements
Chalcogenide scintillators
Afterglow
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Summary:Afterglow in two types of semiconductor scintillators, ZnSe(Te) and ZnSe(O,Al), after pulsed X-ray excitation is studied. It is demonstrated that the afterglow can be significantly reduced by annealing in a zinc-rich atmosphere and co-doping by rare-earth elements. The co-doping also decreases the light yield of the ZnSe(Te) crystal, but has a minor influence on the light yield of annealed ZnSe(O,Al). The influence of the co-doping on carrier trapping is discussed.
ISSN:0168-9002
1872-9576
DOI:10.1016/j.nima.2010.06.275