Facility for simultaneous dual-beam ion implantation

The dual implantation chamber (DIC) at Rossendorf Center for Application of Ion Beams in Materials Research allows materials to be implanted using two ion beams simultaneously. This facility is located at the 45 o cross point of two beam lines, one from a single-ended HVEE 500 kV ion implanter and t...

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Bibliographic Details
Published inNuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment Vol. 551; no. 2; pp. 200 - 207
Main Authors Kaschny, J.R., Kögler, R., Tyrrof, H., Bürger, W., Eichhorn, F., Mücklich, A., Serre, C., Skorupa, W.
Format Journal Article
LanguageEnglish
Published Elsevier B.V 11.10.2005
Subjects
Ion beam synthesis
Ion implantation
Radiation effects
SiC
Simultaneous implantation
Radiation effects
Ion implantation
61.72.−y
61.80.−x
85.40.Ry
Si
SiC
Ion beam synthesis
Simultaneous implantation
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Summary:The dual implantation chamber (DIC) at Rossendorf Center for Application of Ion Beams in Materials Research allows materials to be implanted using two ion beams simultaneously. This facility is located at the 45 o cross point of two beam lines, one from a single-ended HVEE 500 kV ion implanter and the other from a HVEE 3 MV Tandetron accelerator. Each beam line is equipped with independent ion fluence and current control. The special design of the beam sweeping system, enables both ion beams to scan the target surface simultaneously in synchronous mode, i.e. both ion spots are kept at coincident positions over the target. Experiments, concerning the formation of SiC nanoclusters in Si by high-dose C and simultaneous Si implantation, are reported.
ISSN:0168-9002
1872-9576
DOI:10.1016/j.nima.2005.06.046