Nanoscale structural parameters based analytical model for GaN HEMTs

• Published in: Superlattices and microstructures Vol. 130; pp. 267 - 276
• Main Authors: Madhulika, Malik, A., Jain, N., Mishra, M., Kumar, S., Rawal, D.S., Singh, Arun K.
• Format: Journal Article
• Language: English
• Published: Elsevier Ltd 01.06.2019
• Subjects: Analytical model; Gallium nitrite (GaN); HEMT; Nanoscale parameters; Simulation and modelling; Two-dimensional electron gas (2-DEG); Gallium nitrite (GaN); Analytical model; Two-dimensional electron gas (2-DEG); Simulation and modelling; HEMT; Nanoscale parameters
• ISSN: 0749-6036; 1096-3677
• DOI: 10.1016/j.spmi.2019.04.040

In this paper, a physics-based analytical model for III-V based high electron mobility transistor (HEMT) is proposed. The variations in permittivity due to the change in thickness of the semiconductor layers from their bulk counterpart to the nanoscale are integrated into the model for the first time. In addition, the influence of trap density on channel charge is considered in the model. The contribution of two lowest energy levels is also considered, widening the applicability of the model for various device designs. The consistency of the proposed model is demonstrated by comparing modeled results with the experimental results of different device designs fabricated from different materials, including GaN. •An improved physics-based model considering two energy sub-bands in the triangular quantum well is proposed.•The effect of scaling of semiconductor layers to nanoscale is incorporated into the model for the first time.•Model evaluates the effect of interface traps and contribution of both the sub-bands, thus widens the applicability of the model.•Model is validated by comparing modelled and measured characteristics of HEMTs fabricated from different GaN materials.