First-principles study of electronic structure and magnetism in SrO crystal contained cation defects
•GGA+U are used to calculate the electronic and magnetic properties of SrO contained with cation vacancies.•Both the neutral Sr vacancy and singly charged Sr vacancy can lead to half-metallicity at the Fermi level and introduce magnetic moment to SrO crystal.•The ferromagnetic (FM) state configurati...
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Published in | Journal of magnetism and magnetic materials Vol. 522; p. 167524 |
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Main Authors | , , , , |
Format | Journal Article |
Language | English |
Published |
Elsevier B.V
15.03.2021
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Subjects | |
Online Access | Get full text |
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Summary: | •GGA+U are used to calculate the electronic and magnetic properties of SrO contained with cation vacancies.•Both the neutral Sr vacancy and singly charged Sr vacancy can lead to half-metallicity at the Fermi level and introduce magnetic moment to SrO crystal.•The ferromagnetic (FM) state configuration is more stable than anti-ferromagnetic (AFM) states.•The magnetic moment is mainly originating from the spin polarization of the partially occupied O 2p states nearest surrounding Sr vacancies.
The electronic and magnetic properties of SrO contained with cation vacancies have been studied with first-principles methods within density functional theory. We investigate three charge states (0, −1, −2) of Sr vacancies and the calculated results demonstrate that both the neutral Sr vacancy (VSr×) and singly charged Sr vacancy (V′Sr) can lead to half-metallicity at the Fermi level and introduce magnetic moment to SrO crystal. The neutral Sr vacancy VSr× has a magnetic moment of 1.85μB and the singly charged V′Sr has a magnetic moment of 0.97μB. Different with the open-shell structure(VSr×,V′Sr), the close shell V″Sr defect does not carry a magnetic moment and the total magnetic moment is equal to zero. Furthermore, results also demonstrate that the magnetic moment is mainly originating from the spin polarization of the partially occupied O 2p states nearest surrounding Sr vacancies. |
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ISSN: | 0304-8853 |
DOI: | 10.1016/j.jmmm.2020.167524 |