Investigation of fcc and hcp island nucleated during homoepitaxial growth of copper by molecular dynamics simulation

We studied thin film growth of Cu on Cu (111) surface by molecular dynamics (MD) simulations using the Embedded Atom Method (EAM) potential and an incidence energy of 0.06 eV at 300 K. At the beginning of the deposition, we observe a coexistence of atoms nucleated on hcp and fcc sites in the first l...

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Published inSuperlattices and microstructures Vol. 127; pp. 118 - 122
Main Authors El Azrak, H., Hassani, A., Eddiai, F., Dardouri, M., Monkade, M., Arbaoui, A., Sbiaai, K., Hasnaoui, A.
Format Journal Article
LanguageEnglish
Published Elsevier Ltd 01.03.2019
Subjects
Atoms nucleated
Coalescence
Copper
Film growth
HCP and FCC
Molecular dynamics
Molecular dynamics
Copper
Atoms nucleated
Coalescence
HCP and FCC
Film growth
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Summary:We studied thin film growth of Cu on Cu (111) surface by molecular dynamics (MD) simulations using the Embedded Atom Method (EAM) potential and an incidence energy of 0.06 eV at 300 K. At the beginning of the deposition, we observe a coexistence of atoms nucleated on hcp and fcc sites in the first layer. The connection of these islands produces a border zone in rectangular form. The coexistence of fcc and hcp geometries has generated energy competition and eventually transitioned to fcc sites implying a large collective movement of several layers. However, the transition to the coexistence of these two structures, can promote coalescence by linking two large mounds. •Thin film growth of Cu on Cu(111) substrate was investigated.•Molecular dynamics simulation based on EAM interaction potential was considered.•Coexistence of two nucleated structures on hcp and fcc sites on the same layer.
ISSN:0749-6036
1096-3677
DOI:10.1016/j.spmi.2017.12.056