李述体, 乔. 马. 陈. 吴. 陈. 杨. 赵. 何. 郑. (2016). Effects of multiple interruptions with trimethylindium-treatment in the InGaN/GaN quantum well on green light emitting diodes. Chinese physics B, 25(10), 442-445. https://doi.org/10.1088/1674-1056/25/10/107803
Chicago Style (17th ed.) Citation李述体, 乔良 马紫光 陈弘 吴海燕 陈雪芳 杨浩军 赵斌 何苗 郑树文. "Effects of Multiple Interruptions with Trimethylindium-treatment in the InGaN/GaN Quantum Well on Green Light Emitting Diodes." Chinese Physics B 25, no. 10 (2016): 442-445. https://doi.org/10.1088/1674-1056/25/10/107803.
MLA (9th ed.) Citation李述体, 乔良 马紫光 陈弘 吴海燕 陈雪芳 杨浩军 赵斌 何苗 郑树文. "Effects of Multiple Interruptions with Trimethylindium-treatment in the InGaN/GaN Quantum Well on Green Light Emitting Diodes." Chinese Physics B, vol. 25, no. 10, 2016, pp. 442-445, https://doi.org/10.1088/1674-1056/25/10/107803.