Effects of multiple interruptions with trimethylindium-treatment in the InGaN/GaN quantum well on green light emitting diodes

In this study, the influence of multiple interruptions with trimethylindium(TMIn)-treatment in InGaN/GaN multiple quantum wells(MQWs) on green light-emitting diode(LED) is investigated. A comparison of conventional LEDs with the one fabricated with our method shows that the latter has better optical...

Full description

Saved in:
Bibliographic Details
Published inChinese physics B Vol. 25; no. 10; pp. 442 - 445
Main Author 乔良 马紫光 陈弘 吴海燕 陈雪芳 杨浩军 赵斌 何苗 郑树文 李述体
Format Journal Article
LanguageEnglish
Published 01.10.2016
Online AccessGet full text
ISSN1674-1056
2058-3834
DOI10.1088/1674-1056/25/10/107803

Cover

More Information
Summary:In this study, the influence of multiple interruptions with trimethylindium(TMIn)-treatment in InGaN/GaN multiple quantum wells(MQWs) on green light-emitting diode(LED) is investigated. A comparison of conventional LEDs with the one fabricated with our method shows that the latter has better optical properties. Photoluminescence(PL) full-width at half maximum(FWHM) is reduced, light output power is much higher and the blue shift of electroluminescence(EL) dominant wavelength becomes smaller with current increasing. These improvements should be attributed to the reduced interface roughness of MQW and more uniformity of indium distribution in MQWs by the interruptions with TMIn-treatment.
Bibliography:Liang Qiao;Zi-Guang Ma;Hong Chen;Hai-Yan Wu;Xue-Fang Chen;Hao-Jun Yang;Bin Zhao;Miao He;Shu-Wen Zheng;Shu-Ti Li;Guangdong Provincial Key Laboratory of Nanophotonic Functional Materials and Devices, Institute of Opto-Electronic Materials and Technology, South China Normal University;Key Laboratory for Renewable Energy, Chinese Academy of Sciences, Beijing Key Laboratory for New Energy Materials and Devices, Beijing National Laboratory for Condense Matter Physics, Institute of Physics,Chinese Academy of Sciences;College of Physics and Optoelectric Engineering, Guangdong University of Technology
11-5639/O4
ISSN:1674-1056
2058-3834
DOI:10.1088/1674-1056/25/10/107803