Effects of multiple interruptions with trimethylindium-treatment in the InGaN/GaN quantum well on green light emitting diodes
In this study, the influence of multiple interruptions with trimethylindium(TMIn)-treatment in InGaN/GaN multiple quantum wells(MQWs) on green light-emitting diode(LED) is investigated. A comparison of conventional LEDs with the one fabricated with our method shows that the latter has better optical...
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Published in | Chinese physics B Vol. 25; no. 10; pp. 442 - 445 |
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Main Author | |
Format | Journal Article |
Language | English |
Published |
01.10.2016
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Online Access | Get full text |
ISSN | 1674-1056 2058-3834 |
DOI | 10.1088/1674-1056/25/10/107803 |
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Summary: | In this study, the influence of multiple interruptions with trimethylindium(TMIn)-treatment in InGaN/GaN multiple quantum wells(MQWs) on green light-emitting diode(LED) is investigated. A comparison of conventional LEDs with the one fabricated with our method shows that the latter has better optical properties. Photoluminescence(PL) full-width at half maximum(FWHM) is reduced, light output power is much higher and the blue shift of electroluminescence(EL) dominant wavelength becomes smaller with current increasing. These improvements should be attributed to the reduced interface roughness of MQW and more uniformity of indium distribution in MQWs by the interruptions with TMIn-treatment. |
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Bibliography: | Liang Qiao;Zi-Guang Ma;Hong Chen;Hai-Yan Wu;Xue-Fang Chen;Hao-Jun Yang;Bin Zhao;Miao He;Shu-Wen Zheng;Shu-Ti Li;Guangdong Provincial Key Laboratory of Nanophotonic Functional Materials and Devices, Institute of Opto-Electronic Materials and Technology, South China Normal University;Key Laboratory for Renewable Energy, Chinese Academy of Sciences, Beijing Key Laboratory for New Energy Materials and Devices, Beijing National Laboratory for Condense Matter Physics, Institute of Physics,Chinese Academy of Sciences;College of Physics and Optoelectric Engineering, Guangdong University of Technology 11-5639/O4 |
ISSN: | 1674-1056 2058-3834 |
DOI: | 10.1088/1674-1056/25/10/107803 |