808 nm Semiconductor Lasers with Tailored Gain for Mode Shape

We implement the concept of the distributed electrode, which allows to improve the modal behavior of lasers and to reduce spatial-hole burning effects by preferentially localizing current injection in the center of the structure, hence discriminating the optical mode. We report the first realization...

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Bibliographic Details
Published inApplied Mechanics and Materials Vol. 84-85; pp. 603 - 606
Main Authors Qiao, Zhong Liang, Li, Hui, Qu, Yi, Gao, Xin, Lu, Peng, Zhang, Si Yu, Liu, Guo Jun, Bo, Bao Xue
Format Journal Article
LanguageEnglish
Published Zurich Trans Tech Publications Ltd 01.08.2011
Subjects
Laser Mode
Self-Focusing
Spatial Filter
Gaussian Distribution
Laser Beam Steering
Semiconductor Lasers
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Summary:We implement the concept of the distributed electrode, which allows to improve the modal behavior of lasers and to reduce spatial-hole burning effects by preferentially localizing current injection in the center of the structure, hence discriminating the optical mode. We report the first realization of distributed electrode lasers emitting at 808 nm with the measured full width at half maximum (FWHM) angle of the minimal horizontal angle as 3.8° while the maximum continuous-wave output power is up to 4 W and high slope efficiencies as high as 0.95 W/A.
Bibliography:Selected, peer reviewed papers from the International Conference on Green Power, Materials and Manufacturing Technology and Applications (GPMMTA 2011), July 15-18, 2011, Chongqing, China
ISBN:3037852240
9783037852248
ISSN:1660-9336
1662-7482
1662-7482
DOI:10.4028/www.scientific.net/AMM.84-85.603