Characterization of Al2O3 coatings oxidized from Al with different proportion of seed crystals at a lower temperature

•α-Al2O3 seed crystals were added into targets and sputtered to induce the growth of α-Al2O3 coatings.•At 580°C, the formation of α-Al2O3 was promoted by as-prepared seed crystals and energy bombardment during plasma oxidation.•The Al2O3 coating was compact, performing a good corrosion resistance an...

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Published inApplied surface science Vol. 283; pp. 87 - 93
Main Authors Wang, Chen, Lin, Yuebin, He, Fei, Luo, Xinyi, Tao, Jie
Format Journal Article
LanguageEnglish
Published Amsterdam Elsevier B.V 15.10.2013
Elsevier
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Summary:•α-Al2O3 seed crystals were added into targets and sputtered to induce the growth of α-Al2O3 coatings.•At 580°C, the formation of α-Al2O3 was promoted by as-prepared seed crystals and energy bombardment during plasma oxidation.•The Al2O3 coating was compact, performing a good corrosion resistance and metallurgical bonding with the substrate.•The inducing effect of seed crystals became weak with the increment content of seed crystals. Al layer with α-Al2O3 seed crystals was prepared on the surface of 316L stainless steel (SS) by a double cathodes discharge technique, in which the mixed targets of pure Al doped with different proportions of α-Al2O3 were used. Then, Al2O3 coatings were obtained after plasma oxidization at 580°C. The phase composition, microstructure and morphology of the coatings were studied respectively by means of glancing-angle (1°) X-ray diffractometry (GAXRD) and scanning electron microscopy (SEM). Furthermore, the bonding force and corrosion resistance of the coatings were measured. The results indicated that α-Al2O3 nucleated and grew surrounding the seed crystals as the Volmer–Weber Mode. The Al2O3 coating was compact, performing a good corrosion resistance and metallurgical bonding. The inducing effects of α-Al2O3 with different fractions were discussed. α-Al2O3 (5.5wt.%) was distributed in the Al layer when the target possessing 10% α-Al2O3 was used. After plasma oxidation, 65.54wt.% α-Al2O3 was obtained which was 10.34% more than that obtained by the oxidation of pure Al at the same condition. However, the inducing effects became weak with the further increment of content of α-Al2O3 seed crystals.
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ISSN:0169-4332
1873-5584
DOI:10.1016/j.apsusc.2013.06.030