Nucleation, growth and retrogrowth of oxidation induced stacking faults in thin silicon-on-insulator

• Published in: Journal of electronic materials Vol. 28; no. 1; pp. 13 - 18
• Main Authors: GILES, L. F, KUNII, Y, IZUMI, K
• Format: Journal Article
• Language: English
• Published: New York, NY Institute of Electrical and Electronics Engineers 1999; Springer Nature B.V
• Subjects: Condensed matter: structure, mechanical and thermal properties; Defects and impurities in crystals; microstructure; Exact sciences and technology; Physics; Stacking faults and other planar or extended defects; Structure of solids and liquids; crystallography; Stacking faults; Semiconductor materials; SIMOX; Nonmetals; Silicon-on-insulator; Models; Oxidation; Shrinkage; Experimental study; Heat treatments; Defect formation