Nucleation, growth and retrogrowth of oxidation induced stacking faults in thin silicon-on-insulator

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Bibliographic Details
Published inJournal of electronic materials Vol. 28; no. 1; pp. 13 - 18
Main Authors GILES, L. F, KUNII, Y, IZUMI, K
Format Journal Article
LanguageEnglish
Published New York, NY Institute of Electrical and Electronics Engineers 1999
Springer Nature B.V
Subjects
Condensed matter: structure, mechanical and thermal properties
Defects and impurities in crystals; microstructure
Exact sciences and technology
Physics
Stacking faults and other planar or extended defects
Structure of solids and liquids; crystallography
Stacking faults
Semiconductor materials
SIMOX
Nonmetals
Silicon-on-insulator
Models
Oxidation
Shrinkage
Experimental study
Heat treatments
Defect formation
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ISSN:0361-5235
1543-186X
DOI:10.1007/s11664-999-0188-6