Electric-field-dependent charge delocalization from dopant atoms in silicon junctionless nanowire transistor

• Published in: Chinese physics B Vol. 25; no. 10; pp. 464 - 468
• Main Author: 王昊 韩伟华 赵晓松 张望 吕奇峰 马刘红 杨富华
• Format: Journal Article
• Language: English
• Published: 01.10.2016

We study electric-field-dependent charge delocalization from dopant atoms in a silicon junctionless nanowire transistor by low-temperature electron transport measurement. The Arrhenius plot of the temperature-dependent conductance demonstrates the transport behaviors of variable-range hopping(below...