Electric-field-dependent charge delocalization from dopant atoms in silicon junctionless nanowire transistor

• Published in: Chinese physics B Vol. 25; no. 10; pp. 464 - 468
• Main Author: 王昊 韩伟华 赵晓松 张望 吕奇峰 马刘红 杨富华
• Format: Journal Article
• Language: English
• Published: 01.10.2016
• ISSN: 1674-1056; 2058-3834
• DOI: 10.1088/1674-1056/25/10/108102

We study electric-field-dependent charge delocalization from dopant atoms in a silicon junctionless nanowire transistor by low-temperature electron transport measurement. The Arrhenius plot of the temperature-dependent conductance demonstrates the transport behaviors of variable-range hopping(below 30 K) and nearest-neighbor hopping(above 30 K).The activation energy for the charge delocalization gradually decreases due to the confinement potential of the conduction channel decreasing from the threshold voltage to the flatband voltage. With the increase of the source–drain bias, the activation energy increases in a temperature range from 30 K to 100 K at a fixed gate voltage, but decreases above the temperature of 100 K.