Semiconductor type single wall carbon nanotube absorber for passive mode-locked Nd:YVO4 laser

The pure semiconductor type single wall carbon nanotubes (SWCNT) was transferred on hydrophilic glass substrate to fabricate saturable absorbers by vertical evaporation technique. The recovery time of the absorber is 350fs. The saturation intensity of the absorber was found to be 115μJ/cm2 at 1060nm...

Full description

Saved in:
Bibliographic Details
Published inOptik (Stuttgart) Vol. 123; no. 14; pp. 1279 - 1281
Main Authors Cheng, S.Y., Wang, Y.G., Tang, Jau, Zhang, L., Sun, L., Lin, X.C., Li, J.M.
Format Journal Article
LanguageEnglish
Published Elsevier GmbH 01.07.2012
Subjects
Absorber
Continuous wave
Evaporation
Lasers
Mode locking
Modulation
Neodymium
Pumps
Semiconductor
Semiconductors
Single wall carbon nanotube
Single wall carbon nanotubes
42.60.Fc
Semiconductor
Single wall carbon nanotube
Mode locking
42.70.Km
42.65.Re
Absorber
42.70.Ng
Online AccessGet full text

Cover

More Information
Summary:The pure semiconductor type single wall carbon nanotubes (SWCNT) was transferred on hydrophilic glass substrate to fabricate saturable absorbers by vertical evaporation technique. The recovery time of the absorber is 350fs. The saturation intensity of the absorber was found to be 115μJ/cm2 at 1060nm. The modulation depth of the absorber could be about 7%. Passive mode-locked Nd:YVO4 laser using this kind of absorber was demonstrated. The largest average output power of the mode-locked laser is 1.4W at the pump power of 7.8W. The continuous wave mode-locked pulses with the repetition of 80MHz were achieved.
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ObjectType-Article-1
ObjectType-Feature-2
ISSN:0030-4026
1618-1336
DOI:10.1016/j.ijleo.2011.02.036