Cu2O single crystal growth using CuCl flux and bandgap evaluation

•Novel methodology for single crystal growth.•Precise Cu2O bandgap: Eg = 1.95 eV.•Potential for enhanced solar cell efficiency.•Bridging the gap in Cu2O bandgap values.•Key contribution to sustainable energy technology. High-quality Cu2O single crystals were grown in CuCl flux, utilizing an Al2O3 or...

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Bibliographic Details
Published inMaterials letters Vol. 365; p. 136428
Main Authors Kawamura, Fumio, Nagai, Takehiko, Tampo, Hitoshi
Format Journal Article
LanguageEnglish
Published Elsevier B.V 15.06.2024
Subjects
Bandgap
Cu2O
Flux method
Single crystal
Flux method
Single crystal
Cu2O
Bandgap
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Summary:•Novel methodology for single crystal growth.•Precise Cu2O bandgap: Eg = 1.95 eV.•Potential for enhanced solar cell efficiency.•Bridging the gap in Cu2O bandgap values.•Key contribution to sustainable energy technology. High-quality Cu2O single crystals were grown in CuCl flux, utilizing an Al2O3 or MgO crucible and a slow-cooling technique. The resultant crystals exhibited a well-faceted cubic morphology, each with dimensions in the order of a few micrometers. The bandgap of Cu2O was evaluated by diffuse reflectance spectroscopy and photoluminescence measurement using single crystals. The measured bandgap (Eg ≒ 1.95 eV) was marginally lower than the widely reported value. However, this measured value could be reasonably asserted to be representative of the intrinsic bandgap because the single crystals experienced minimal strain from the substrate, and the optical absorbance data displayed no arbitrariness.
ISSN:0167-577X
1873-4979
DOI:10.1016/j.matlet.2024.136428