Three-dimensional micromachining of silicon using a nuclear microprobe

We describe a novel technique for silicon microfabrication based on energetic mega-electron-volt (MeV) helium irradiation and subsequent electrochemical etching. The ion-induced damage in the irradiated regions slows down the porous silicon formation during electrochemical etching, producing a raise...

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Published inNuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms Vol. 222; no. 3; pp. 513 - 517
Main Authors Teo, E.J, Tavernier, E.P, Breese, M.B.H, Bettiol, A.A, Watt, F, Liu, M.H, Blackwood, D.J
Format Journal Article
LanguageEnglish
Published Elsevier B.V 01.08.2004
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Summary:We describe a novel technique for silicon microfabrication based on energetic mega-electron-volt (MeV) helium irradiation and subsequent electrochemical etching. The ion-induced damage in the irradiated regions slows down the porous silicon formation during electrochemical etching, producing a raised microstructure after cleaning in diluted potassium hydroxide solution. The thickness of the porous silicon layer formed depends on the accumulated fluence at each scan point. A relationship between the irradiated fluence and feature height is investigated on a p-type [1 0 0] silicon with a resistivity of 0.03 Ω cm using focused 2 MeV helium beam. We use this relationship to micromachine multilevel structures with a single focused helium beam energy.
ISSN:0168-583X
1872-9584
DOI:10.1016/j.nimb.2004.04.159