Three-dimensional micromachining of silicon using a nuclear microprobe
We describe a novel technique for silicon microfabrication based on energetic mega-electron-volt (MeV) helium irradiation and subsequent electrochemical etching. The ion-induced damage in the irradiated regions slows down the porous silicon formation during electrochemical etching, producing a raise...
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Published in | Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms Vol. 222; no. 3; pp. 513 - 517 |
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Main Authors | , , , , , , |
Format | Journal Article |
Language | English |
Published |
Elsevier B.V
01.08.2004
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Subjects | |
Online Access | Get full text |
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Summary: | We describe a novel technique for silicon microfabrication based on energetic mega-electron-volt (MeV) helium irradiation and subsequent electrochemical etching. The ion-induced damage in the irradiated regions slows down the porous silicon formation during electrochemical etching, producing a raised microstructure after cleaning in diluted potassium hydroxide solution. The thickness of the porous silicon layer formed depends on the accumulated fluence at each scan point. A relationship between the irradiated fluence and feature height is investigated on a p-type [1
0
0] silicon with a resistivity of 0.03 Ω
cm using focused 2 MeV helium beam. We use this relationship to micromachine multilevel structures with a single focused helium beam energy. |
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ISSN: | 0168-583X 1872-9584 |
DOI: | 10.1016/j.nimb.2004.04.159 |