Structural and optical properties of as-synthesized, Ga2O3-coated, and Al2O3-coated GaN nanowires

• Published in: Thin solid films Vol. 466; no. 1-2; pp. 265 - 271
• Main Authors: KANG, Myungil, LEE, Jong-Soo, SIM, Sung-Kyu, MIN, Byungdon, CHO, Kyoungah, KIM, Hyunsuk, SUNG, Man-Young, KIM, Sangsig, SE AHN SONG, LEE, Moon-Sook
• Format: Journal Article
• Language: English
• Published: Lausanne Elsevier Science 01.11.2004
• Subjects: Cross-disciplinary physics: materials science; rheology; Exact sciences and technology; Materials science; Methods of deposition of films and coatings; film growth and epitaxy; Nanoscale materials and structures: fabrication and characterization; Physics; Quantum wires; Vapor phase epitaxy; growth from vapor phase; Scanning electron microscopy; Atomic layer method; Inorganic compounds; Gallium nitrides; Photoluminescence; Binary compounds; Crystal growth from vapors; XRD; Evaporation; Experimental study; Coatings; Coated material; Thermal evaporation; CVD; Gallium oxides; Transmission electron microscopy; Optical properties; Oxidation; Nanowires; Thermal annealing; GaN nanowires; Nanostructured materials; Passivation; III-V semiconductors

Structural and optical properties of as-synthesized, Ga2O3-coated, and Al2O3-coated GaN nanowires are examined in this paper. GaN nanowires were synthesized by thermal evaporation of ball-milled GaN powders in an NH3 atmosphere. The thermal annealing of the as-synthesized GaN nanowires in an argon a...