Structural and optical properties of as-synthesized, Ga2O3-coated, and Al2O3-coated GaN nanowires

Structural and optical properties of as-synthesized, Ga2O3-coated, and Al2O3-coated GaN nanowires are examined in this paper. GaN nanowires were synthesized by thermal evaporation of ball-milled GaN powders in an NH3 atmosphere. The thermal annealing of the as-synthesized GaN nanowires in an argon a...

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Bibliographic Details
Published inThin solid films Vol. 466; no. 1-2; pp. 265 - 271
Main Authors KANG, Myungil, LEE, Jong-Soo, SIM, Sung-Kyu, MIN, Byungdon, CHO, Kyoungah, KIM, Hyunsuk, SUNG, Man-Young, KIM, Sangsig, SE AHN SONG, LEE, Moon-Sook
Format Journal Article
LanguageEnglish
Published Lausanne Elsevier Science 01.11.2004
Subjects
Cross-disciplinary physics: materials science; rheology
Exact sciences and technology
Materials science
Methods of deposition of films and coatings; film growth and epitaxy
Nanoscale materials and structures: fabrication and characterization
Physics
Quantum wires
Vapor phase epitaxy; growth from vapor phase
Scanning electron microscopy
Atomic layer method
Inorganic compounds
Gallium nitrides
Photoluminescence
Binary compounds
Crystal growth from vapors
XRD
Evaporation
Experimental study
Coatings
Coated material
Thermal evaporation
CVD
Gallium oxides
Transmission electron microscopy
Optical properties
Oxidation
Nanowires
Thermal annealing
GaN nanowires
Nanostructured materials
Passivation
III-V semiconductors
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Summary:Structural and optical properties of as-synthesized, Ga2O3-coated, and Al2O3-coated GaN nanowires are examined in this paper. GaN nanowires were synthesized by thermal evaporation of ball-milled GaN powders in an NH3 atmosphere. The thermal annealing of the as-synthesized GaN nanowires in an argon atmosphere allows their surfaces to be oxidized, leading to the formation of 2 nm-thick Ga2O3 layers. For the oxidized GaN nanowires, the distances between the neighboring lattice planes are shortened, and an excitonic emission band is remarkably enhanced in intensity, compared with the as-synthesized GaN nanowires. In addition, the as-synthesized GaN nanowires were coated cylindrically with Al2O3 by atomic layer deposition technique. Our study suggests that the Al2O3-coating passivates some of surface states in the GaN nanowires.
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:0040-6090
1879-2731
DOI:10.1016/j.tsf.2004.02.025