Influence of pinning trap in Ti/4H–SiC Schottky barrier diode

• Published in: Materials science in semiconductor processing Vol. 6; no. 5; pp. 359 - 362
• Main Authors: Ohtsuka, K., Matsuno, Y., Hase, Y., Sugimoto, H., Fujihira, K., Tarui, Y., Imaizumi, M., Takami, T., Ozeki, T.
• Format: Journal Article
• Language: English
• Published: Elsevier Ltd 01.10.2003
• Subjects: Breakdown; Interface pinning; Power device; Schottky barrier; SiC; 71.55.Ht; 73.40.Ei; 73.40.Gk; 73.20.At; Interface pinning; Breakdown; Power device; SiC; Schottky barrier

Ti/4H–SiC Schottky barrier diode without any intentional edge termination is fabricated. The obtained properties, low on-resistance of 3 mΩ cm 2 and low leakage current of 10 −4 A/cm 2 at 1000 V, are evaluated by device simulation considering pinning at metal/semiconductor interface. The breakdown v...