Influence of pinning trap in Ti/4H–SiC Schottky barrier diode
Ti/4H–SiC Schottky barrier diode without any intentional edge termination is fabricated. The obtained properties, low on-resistance of 3 mΩ cm 2 and low leakage current of 10 −4 A/cm 2 at 1000 V, are evaluated by device simulation considering pinning at metal/semiconductor interface. The breakdown v...
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Published in | Materials science in semiconductor processing Vol. 6; no. 5; pp. 359 - 362 |
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Main Authors | , , , , , , , , |
Format | Journal Article |
Language | English |
Published |
Elsevier Ltd
01.10.2003
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Subjects | |
Online Access | Get full text |
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Summary: | Ti/4H–SiC Schottky barrier diode without any intentional edge termination is fabricated. The obtained properties, low on-resistance of 3
mΩ
cm
2 and low leakage current of 10
−4
A/cm
2 at 1000
V, are evaluated by device simulation considering pinning at metal/semiconductor interface. The breakdown voltage is explained by minimization of electric field enhancement at the Schottky electrode edge due to pinning. The leakage current corresponds to Schottky barrier tunneling current depending on drift layer doping and Schottky barrier height. |
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ISSN: | 1369-8001 1873-4081 |
DOI: | 10.1016/j.mssp.2003.08.016 |