Influence of pinning trap in Ti/4H–SiC Schottky barrier diode

Ti/4H–SiC Schottky barrier diode without any intentional edge termination is fabricated. The obtained properties, low on-resistance of 3 mΩ cm 2 and low leakage current of 10 −4 A/cm 2 at 1000 V, are evaluated by device simulation considering pinning at metal/semiconductor interface. The breakdown v...

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Published inMaterials science in semiconductor processing Vol. 6; no. 5; pp. 359 - 362
Main Authors Ohtsuka, K., Matsuno, Y., Hase, Y., Sugimoto, H., Fujihira, K., Tarui, Y., Imaizumi, M., Takami, T., Ozeki, T.
Format Journal Article
LanguageEnglish
Published Elsevier Ltd 01.10.2003
Subjects
Breakdown
Interface pinning
Power device
Schottky barrier
SiC
71.55.Ht
73.40.Ei
73.40.Gk
73.20.At
Interface pinning
Breakdown
Power device
SiC
Schottky barrier
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Abstract Ti/4H–SiC Schottky barrier diode without any intentional edge termination is fabricated. The obtained properties, low on-resistance of 3 mΩ cm 2 and low leakage current of 10 −4 A/cm 2 at 1000 V, are evaluated by device simulation considering pinning at metal/semiconductor interface. The breakdown voltage is explained by minimization of electric field enhancement at the Schottky electrode edge due to pinning. The leakage current corresponds to Schottky barrier tunneling current depending on drift layer doping and Schottky barrier height.
AbstractList Ti/4H–SiC Schottky barrier diode without any intentional edge termination is fabricated. The obtained properties, low on-resistance of 3 mΩ cm 2 and low leakage current of 10 −4 A/cm 2 at 1000 V, are evaluated by device simulation considering pinning at metal/semiconductor interface. The breakdown voltage is explained by minimization of electric field enhancement at the Schottky electrode edge due to pinning. The leakage current corresponds to Schottky barrier tunneling current depending on drift layer doping and Schottky barrier height.
Author Takami, T.
Ozeki, T.
Hase, Y.
Ohtsuka, K.
Sugimoto, H.
Matsuno, Y.
Fujihira, K.
Imaizumi, M.
Tarui, Y.
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CitedBy_id crossref_primary_10_1016_j_diamond_2006_03_016
crossref_primary_10_1016_j_physb_2005_12_096
crossref_primary_10_1016_j_sse_2021_107992
crossref_primary_10_4028_www_scientific_net_MSF_725_53
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Keywords 71.55.Ht
73.40.Ei
73.40.Gk
73.20.At
Interface pinning
Breakdown
Power device
SiC
Schottky barrier
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Snippet Ti/4H–SiC Schottky barrier diode without any intentional edge termination is fabricated. The obtained properties, low on-resistance of 3 mΩ cm 2 and low...
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SubjectTerms Breakdown
Interface pinning
Power device
Schottky barrier
SiC
Title Influence of pinning trap in Ti/4H–SiC Schottky barrier diode
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