Secondary-ion mass spectrometry of photosensitive heterophase semiconductor

The influence of positively charged ion bombardment and white light illumination on polycrystalline high-resistance photosensitive CdS–PbS semiconductor was investigated by secondary-ion mass spectrometry method. The illumination during ion sputtering was found to result in an ion yield decrease of...

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Bibliographic Details
Published inNuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms Vol. 226; no. 4; pp. 595 - 600
Main Authors Rokakh, A.G., Zhukov, A.G., Stetsura, S.V., Serdobintsev, A.A.
Format Journal Article
LanguageEnglish
Published Elsevier B.V 01.12.2004
Subjects
Heterophase semiconductor
Photosensitivity
SIMS
Surface charging
Heterophase semiconductor
Surface charging
78.66.Hf
Photosensitivity
SIMS
82.80.Ms
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Summary:The influence of positively charged ion bombardment and white light illumination on polycrystalline high-resistance photosensitive CdS–PbS semiconductor was investigated by secondary-ion mass spectrometry method. The illumination during ion sputtering was found to result in an ion yield decrease of some film components (Cd or PbO) and in increase of another one (Pb). The experimental data are explained by the model of a heterophase semiconductor resistant to degradation.
ISSN:0168-583X
1872-9584
DOI:10.1016/j.nimb.2004.08.009