p-Type ZnO:N obtained by ion implantation of nitrogen with post-implantation annealing in oxygen radicals

It had been shown that ion implantation of nitrogen into zinc oxide film (nitrogen is an acceptor impurity in ZnO) could result in the formation of the hole type of conductivity only in the case of annealing in the atmosphere of oxygen radicals. The ion implantation and the following annealing had i...

Full description

Saved in:
Bibliographic Details
Published inNuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment Vol. 514; no. 1-3; pp. 117 - 121
Main Authors Georgobiani, A.N., Gruzintsev, A.N., Volkov, V.T., Vorobiev, M.O., Demin, V.I., Dravin, V.A.
Format Journal Article
LanguageEnglish
Published Elsevier B.V 21.11.2003
Subjects
Acceptors
Epitaxy
II–VI compounds
Ion implantation
Luminescence
II–VI compounds
Ion implantation
72.20.−i
Epitaxy
Luminescence
71.20.Nr
78.55.−m
81.15.Hi
61.72.Vv
Acceptors
Online AccessGet full text

Cover

More Information
Summary:It had been shown that ion implantation of nitrogen into zinc oxide film (nitrogen is an acceptor impurity in ZnO) could result in the formation of the hole type of conductivity only in the case of annealing in the atmosphere of oxygen radicals. The ion implantation and the following annealing had influenced not only at the electrical properties of ZnO:N+ layers but also at their photoluminescence spectra. The luminescence bands which are due to the introducing of nitrogen had appeared in the ultraviolet and visible ranges of spectra.
ISSN:0168-9002
1872-9576
DOI:10.1016/j.nima.2003.08.092