A 1.5-V transformer-based ultra-wideband LNA chip design

• Published in: Microwave and optical technology letters Vol. 51; no. 11; pp. 2649 - 2652
• Main Authors: Huang, Jhin-Fang, Shie, Pei-Jiuan, Liu, Ron-Yi
• Format: Journal Article
• Language: English
• Published: Hoboken Wiley Subscription Services, Inc., A Wiley Company 01.11.2009
• Subjects: CMOS; LC ladder filter; low-noise amplifier; transformer; UWB
• ISSN: 0895-2477; 1098-2760
• DOI: 10.1002/mop.24705

In this article, a low‐noise amplifier (LNA) for ultra‐wideband (UWB) systems operating at 3–5 GHz frequency range is presented. The proposed LNA uses an on‐chip transformer to achieve the realization of a wideband input‐integrated matching to the antenna impedance, as well as the cascode amplifier with shunt peaking can provide a high power gain. The transformer‐based LNA fabricated in a TSMC 0.18‐μm CMOS process with 1.5 V supply voltage achieves a maximum power gain of 19.2 dB in addition to the minimum noise figure (NF) of 3.5 dB, an input return loss (S11) smaller than −9.3 dB over the whole frequency range. This circuit also present an input‐referred third‐order intercept point (IIP3) of −11 dBm at 5 GHz and an input‐referred 1 dB compression point of −21 dBm at 5 GHz. The chip area including pads is only 0.8 mm2 and power dissipation is 13.5 mW. © 2009 Wiley Periodicals, Inc. Microwave Opt Technol Lett 51: 2649–2652, 2009; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.24705