Fabrication and Characterization of VO2 Thin Films by Direct Current Facing Targets Magnetron Sputtering and Low Temperature Oxidation

• Published in: Transactions of Tianjin University Vol. 14; no. 3; pp. 173 - 177
• Main Author: 梁继然 胡明 刘志刚 韩雷 陈涛
• Format: Journal Article
• Language: English
• Published: Heidelberg Tianjin University 01.06.2008; School of Electronic Information Engineering, Tianjin University, Tianjin 300072, China
• Subjects: Engineering; Humanities and Social Sciences; Mechanical Engineering; multidisciplinary; Science; 二氧化钒薄膜; 低温氧化; 制备方法; 直流电表面目标磁电管反应溅射法; direct current facing targets magnetron sputtering; vanadium dioxide; microstructure; low temperature oxidation
• ISSN: 1006-4982; 1995-8196
• DOI: 10.1007/s12209-008-0031-9

Low valence vanadium oxide（VO2-x） thin films were prepared on SiO2/Si substrates at room temperature by direct current facing targets reactive magnetron sputtering, and then processed through rapid thermal annealing. The effects of the annealing on the structure and phase transition property of VO2 were discussed. X-ray photoelectron spectroscopy, X-ray diffraction technique and Fourier transform infrared spectroscopy were employed to study the phase composition and structure of the thin films. The resistance-temperature property was measured. The results show that VO2 thin film is obtained after annealed at 320℃ for 3 h, its phase transition temperature is 56 ℃, and the resistance changes by more than 2 orders. The vanadium oxide thin films are applicable in thermochromic smart windows, and the deposition and annealing process is compatible with micro electromechanical system process.