Aharonov Bohm effect in 2D topological insulator

We present magnetotransport measurements in HgTe quantum well with inverted band structure, which expected to be a two-dimensional topological insulator having the bulk gap with helical gapless states at the edge. The negative magnetoresistance is observed in the local and nonlocal resistance config...

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Bibliographic Details
Published inSolid state communications Vol. 205; pp. 4 - 8
Main Authors Gusev, G.M., Kvon, Z.D., Shegai, O.A., Mikhailov, N.N., Dvoretsky, S.A.
Format Journal Article
LanguageEnglish
Published Elsevier Ltd 01.03.2015
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Summary:We present magnetotransport measurements in HgTe quantum well with inverted band structure, which expected to be a two-dimensional topological insulator having the bulk gap with helical gapless states at the edge. The negative magnetoresistance is observed in the local and nonlocal resistance configuration followed by the periodic oscillations damping with magnetic field. We attribute such behaviour to Aharonov–Bohm effect due to magnetic flux through the charge carrier puddles coupled to the helical edge states. The characteristic size of these puddles is about 100nm.
ISSN:0038-1098
1879-2766
DOI:10.1016/j.ssc.2014.12.017