Solution-processed organic-inorganic hybrid gate insulator for complementary thin film transistor logic circuits

• Published in: Thin solid films Vol. 673; pp. 14 - 18
• Main Authors: Cho, Hyeong Jun, Lee, Dong-Hoon, Park, Eung-Kyu, Kim, Min Su, Lee, So Young, Park, KeeChan, Choe, Heehwan, Jeon, Jae-Hong, Kim, Yong-Sang
• Format: Journal Article
• Language: English
• Published: Elsevier B.V 01.03.2019
• Subjects: Alumina; Complementary thin film transistor; InGaZnO; Pentacene; Poly(4-vinylphenol-co-methyl methacrylate); Complementary thin film transistor; Pentacene; Poly(4-vinylphenol-co-methyl methacrylate); Alumina; InGaZnO
• ISSN: 0040-6090; 1879-2731
• DOI: 10.1016/j.tsf.2019.01.025

In this work, we demonstrated a poly(4-vinylphenol-co-methyl methacrylate) (PVP-co-PMMA)/Al2O3 double-stacked insulator deposited by solution process. The double-stacked insulator exhibited higher degree of performance uniformity than individual single-stacked insulators. We fabricated an inverter circuit in order to demonstrate the applicability of the proposed insulator in complementary logic circuits, which are composed of metal oxide thin film transistors as the n-channel device and organic thin film transistors as the p-channel device. We utilized amorphous indium gallium zinc oxide thin film transistor and pentacene thin film transistor for the n-channel and p-channel devices, respectively. It was observed that the PVP-co-PMMA/Al2O3 double-stacked insulator had the effect of overcoming the problems related to individual single-stacked layers, such as high leakage current of Al2O3 and low dielectric constant of PVP-co-PMMA. The inverter operated at a threshold voltage of 1.5 V and exhibited high voltage gain of 17.3 V/V at the supply voltage of 3 V. •Complementary TFT structure sharing gate insulator and metallization was developed•Double-stacked PVP-co-PMMA/Al2O3 insulator showed higher performance than an individual single layer•The surface roughness of PVP-co-PMMA film was improved by the underlying Al2O3 layer•Top-gate and bottom-gate mixed-structure for thin film CMOS was demonstrated