Fabrication and properties of a high-performance chlorine doped graphene quantum dot based photovoltaic detector

• Published in: RSC advances Vol. 5; no. 37; pp. 29222 - 29229
• Main Authors: Zhao, Jianhong, Tang, Libin, Xiang, Jinzhong, Ji, Rongbin, Hu, Yanbo, Yuan, Jun, Zhao, Jun, Tai, Yunjian, Cai, Yuhua
• Format: Journal Article
• Language: English
• Published: 01.01.2015
• Subjects: capacitance; Chlorine; Detectors; Devices; electrochemistry; electronic equipment; Graphene; Optoelectronic devices; Performance enhancement; Photovoltaic cells; quantum dots; Qunatum dots; Solar cells
• ISSN: 2046-2069; 2046-2069
• DOI: 10.1039/C5RA02358K

Functionalized graphene quantum dot (GQD) based materials play an important role in the development of high-performance, low-cost, large-area optoelectronic devices. The progress, however, is impeded by the poor understanding of the physical mechanism for GQDs in these devices. In this paper, chlorine doped GQD (Cl-GQD) based photovoltaic photodetectors have been fabricated using a solution process, and it was found that the presence of Cl-GQDs can significantly enhance the performance of the device. The improved performance of Cl-GQD based devices has been investigated by systematically studying the structural, morphological, optical, electrical, electrochemical and photoelectrical properties. The important photovoltaic detectors parameters such as the saturation current densities ( J 0 ), barrier heights ( Φ b ), built-in potentials ( V bi ), carrier concentrations ( N ) and depletion layer widths ( W d ) have been calculated and discussed by studying the I – V and C – V characteristics under different illuminations. The frequency dependent capacitance and conductance have also been discussed. The results provide guidance for developing high-performance graphene based optoelectronic devices.