Instability investigation of In0.7Ga0.3As quantum-well MOSFETs with Al2O3 and Al2O3/HfO2
•We performed the instability investigation on InGaAs quantum-well InGaAs MOSFETs.•The InGaAs MOSFET with Al2O3/HfO2 exhibits better electrostatic integrity, however, it shows worse reliability and frequency dispersion behavior than one with Al2O3.•At cryogenic temperature, the device with Al2O3/HfO...
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Published in | Solid-state electronics Vol. 121; pp. 16 - 19 |
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Main Authors | , , , , , , , , , , , , |
Format | Journal Article |
Language | English |
Published |
Elsevier Ltd
01.07.2016
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Subjects | |
Online Access | Get full text |
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Summary: | •We performed the instability investigation on InGaAs quantum-well InGaAs MOSFETs.•The InGaAs MOSFET with Al2O3/HfO2 exhibits better electrostatic integrity, however, it shows worse reliability and frequency dispersion behavior than one with Al2O3.•At cryogenic temperature, the device with Al2O3/HfO2 induces worse hysteresis behavior than one with Al2O3.
We present an instability investigation of In0.7Ga0.3As quantum-well (QW) metal–oxide–semiconductor field-effect-transistors (MOSFETs) on InP substrate with Al2O3 and Al2O3/HfO2 gate stacks. The device with bi-layer Al2O3/HfO2 gate stack exhibits larger shift in threshold-voltage (ΔVT) under a constant-voltage-stress condition (CVS), than one with single Al2O3 gate stack. At cryogenic temperature, the device with bi-layer Al2O3/HfO2 gate stack also induces worse hysteresis behavior than one with single Al2O3 gate stack. These are mainly attributed to more traps inside the HfO2 material, yielding a charge build-up inside the HfO2 gate dielectric. This strongly calls for a follow-up process to minimize those traps within the high-k dielectric layer and eventually to improve the reliability of InGaAs MOSFETs with HfO2-based high-k gate dielectric. |
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ISSN: | 0038-1101 1879-2405 |
DOI: | 10.1016/j.sse.2016.03.008 |