A Co-Simulation Methodology for the Design of Integrated Silicon Spin Qubits With Their Control/Readout Cryo-CMOS Electronics

Recent years have witnessed a steady growth in the achievable quantum systems due to advancements in qubit technology across several hardware platforms. Currently entering an era of noisy intermediate-scale quantum (NISQ) systems brings additional design challenges. In these systems, each individual...

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Bibliographic Details
Published inIEEE journal on emerging and selected topics in circuits and systems Vol. 12; no. 3; pp. 685 - 693
Main Authors Gys, Benjamin, Acharya, Rohith, Van Winckel, Steven, De Greve, Kristiaan, Gielen, Georges, Catthoor, Francky
Format Journal Article
LanguageEnglish
Published Piscataway IEEE 01.09.2022
The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
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Summary:Recent years have witnessed a steady growth in the achievable quantum systems due to advancements in qubit technology across several hardware platforms. Currently entering an era of noisy intermediate-scale quantum (NISQ) systems brings additional design challenges. In these systems, each individual qubit is accompanied by a substantial amount of classical CMOS circuitry for qubit instantiation, control and readout, which is to be integrated at the cryo temperature. This work presents a methodology for the co-design and co-simulation of silicon spin qubits in quantum dots, together with their associated cryo-CMOS circuitry, relying on an established spin qubit compact model. In addition, a detailed procedure is proposed for the integration of the model into a classical design flow, which is crucial for the usability of the model in practice. This is illustrated by simulating the readout of a qubit using a complete CMOS readout chip that behaves in a realistic, nonideal way. Bringing the design to a single simulation environment allows for the capture and analysis of effects that otherwise are not possible to simulate when considering the qubits and the cryo-CMOS circuitry separately. This opens up opportunities for more robust design in the future.
ISSN:2156-3357
2156-3365
DOI:10.1109/JETCAS.2022.3201980