Effect of doping concentration on point defect structure in As-implanted ZnO

• Published in: Solid state communications Vol. 261; pp. 41 - 45
• Main Authors: Wang, Huan–hua, Yuan, Mengyao
• Format: Journal Article
• Language: English
• Published: Elsevier Ltd 01.08.2017
• Subjects: Diffuse x–ray scattering; Ion implantation; Point defects; P–type ZnO; P–type ZnO; Ion implantation; Point defects; Diffuse x–ray scattering
• ISSN: 0038-1098; 1879-2766
• DOI: 10.1016/j.ssc.2017.04.021

The effect of doping concentration on the point defect structure of As–implanted ZnO single crystal was investigated using diffuse x–ray scattering and photoluminescence spectroscopy. Based on the assumption that the low-dose ion implantation did not shift the phonon dispersion of the lattice, Huang diffuse scattering signals were obtained by subtracting thermal diffuse scattering intensities. We found that the point defects aggregate into defect clusters after annealing, and their average size decreases and concentration increases with increasing the doping concentration. The underlying mechanisms of this counter–intuition result were suggested. •This paper reveals the effect of arsenic concentration on the point defect structure in ZnO single crystals.•Acceptor complexes AsZn–2VZn formed in the annealed samples and the implanted samples with higher doses became p–type.•As the doping concentration increases, the defect clusters decreased in their average size while increased in their concentration, and meanwhile the p–type conductivity of the sample increases.