Sweeping total reflection X-ray fluorescence optimisation to monitor the metallic contamination into IC manufacturing

Among the methods available on the market today to control as metallic contamination in integrated circuit manufacturing, Sweeping Total reflection X-ray Fluorescence mode appears a very good method, providing fast and entire wafer mapping. With the goal of a pertinent use of Sweeping Total reflecti...

Full description

Saved in:
Bibliographic Details
Published inSpectrochimica acta. Part B: Atomic spectroscopy Vol. 63; no. 12; pp. 1370 - 1374
Main Authors Borde, Yannick, Danel, Adrien, Roche, Agnes, Veillerot, Marc
Format Journal Article
LanguageEnglish
Published Elsevier B.V 01.12.2008
Subjects
Metallic contamination
Silicon wafer
TXRF
Metallic contamination
Silicon wafer
TXRF
Online AccessGet full text

Cover

More Information
Summary:Among the methods available on the market today to control as metallic contamination in integrated circuit manufacturing, Sweeping Total reflection X-ray Fluorescence mode appears a very good method, providing fast and entire wafer mapping. With the goal of a pertinent use of Sweeping Total reflection X-ray Fluorescence in advanced Integrated Circuit manufacturing this work discusses how acceptable levels of contamination specified by the production (low levels to be detected) can be taken into account. The relation between measurement results (surface coverage, throughput, low limit of detection, limit of quantification, quantification of localized contamination) and Sweeping Total reflection X-ray Fluorescence parameters (number of measurement points and integration time per point) is presented in details. In particular, a model is proposed to explain the mismatch between actual surface contamination in a localized spot on wafer and Total reflection X-ray Fluorescence reading. Both calibration and geometric issues have been taken into account.
ISSN:0584-8547
1873-3565
DOI:10.1016/j.sab.2008.10.034