Optical characterisation of CuInSe2 thin films prepared by two-stage process

• Published in: Applied physics. A, Materials science & processing Vol. 73; no. 3; pp. 387 - 389
• Main Authors: YÜKSEL, Ö. F, BASOL, B. M, SAFAK, H, KARABIYIK, H
• Format: Journal Article
• Language: English
• Published: Berlin Springer 01.09.2001
• Subjects: CHALCOPYRITE; Condensed matter: electronic structure, electrical, magnetic, and optical properties; Copper; COPPER INDIUM SELENIDE; Diffraction; Exact sciences and technology; Materials science; Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity); Optical constants: refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity; Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation; Optical properties of bulk materials and thin films; Physics; SEMICONDUCTORS; THIN FILMS; Trends; X RAYS; Stoichiometry; Inorganic compounds; Indium selenides; Semiconductor materials; Ternary compounds; Transition element compounds; Polycrystals; XRD; Experimental study; Extinction index; Thin films; Copper selenides; Energy gap; Absorption spectra; Optical constants
• ISSN: 0947-8396; 1432-0630
• DOI: 10.1007/s003390100744

Optical absorption spectra of CuInSe2 chalcopyrite semiconductor films prepared using a two-stage technique were investigated. In addition to absorption measurements, energy-dispersive analysis of X-rays (EDAX) and X-ray diffraction measurements (XRD) were also performed. Direct bandgap energy values for the CuInSe2 films were derived from the variation of (*ah*n) with energy. All the measurements were performed on samples with various Cu/In ratios. It was determined from the absorption measurements that the materials have strong absorption at the fundamental band edge. The Eg values showed an increasing trend with decreasing Cu/In ratios.