Fabrication of graphite by pulsed light irradiation of network silicon bearing anthryl groups
We report structural changes of spin-coated network silicon bearing anthryl groups, poly(9-anthrylsilylene) (PAS), by intense pulsed light (IPL) irradiation. The structural changes are achieved in a few hundred microseconds resulting in the formation of graphite films with sheet resistance up to 50 ...
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Published in | Thin solid films Vol. 686; p. 137422 |
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Main Authors | , , |
Format | Journal Article |
Language | English |
Published |
Elsevier B.V
30.09.2019
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Subjects | |
Online Access | Get full text |
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Summary: | We report structural changes of spin-coated network silicon bearing anthryl groups, poly(9-anthrylsilylene) (PAS), by intense pulsed light (IPL) irradiation. The structural changes are achieved in a few hundred microseconds resulting in the formation of graphite films with sheet resistance up to 50 Ω/sq. The conditions of IPL were optimized in order to tune the formation of graphite films as a function of exposure energy and film thickness. The effect of IPL conditions on the morphology and the electrical properties of PAS films were investigated by UV–visible, X-ray photoelectron (XPS), and Raman spectroscopies, as well as atomic force microscopy and sheet resistance measurements. The elimination of network silicon is evidenced in the changes of XPS. The correlation between Raman spectroscopy analysis and sheet resistance exhibit the formation of graphite films.
•Fabrication of graphite films by intense pulsed light irradiation•Conditions of intense pulsed light irradiation•Use of Raman and X-ray photoelectron spectroscopy to monitor structural changes•Investigation of the morphological changes using AFM |
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ISSN: | 0040-6090 1879-2731 |
DOI: | 10.1016/j.tsf.2019.137422 |