Fabrication of graphite by pulsed light irradiation of network silicon bearing anthryl groups

We report structural changes of spin-coated network silicon bearing anthryl groups, poly(9-anthrylsilylene) (PAS), by intense pulsed light (IPL) irradiation. The structural changes are achieved in a few hundred microseconds resulting in the formation of graphite films with sheet resistance up to 50 ...

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Bibliographic Details
Published inThin solid films Vol. 686; p. 137422
Main Authors Tachibana, Hiroaki, Mizuno, Toya, Azumi, Reiko
Format Journal Article
LanguageEnglish
Published Elsevier B.V 30.09.2019
Subjects
Anthryl group
Graphite film
Network silicon
Pulsed light irradiation
Graphite film
Network silicon
Anthryl group
Pulsed light irradiation
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Summary:We report structural changes of spin-coated network silicon bearing anthryl groups, poly(9-anthrylsilylene) (PAS), by intense pulsed light (IPL) irradiation. The structural changes are achieved in a few hundred microseconds resulting in the formation of graphite films with sheet resistance up to 50 Ω/sq. The conditions of IPL were optimized in order to tune the formation of graphite films as a function of exposure energy and film thickness. The effect of IPL conditions on the morphology and the electrical properties of PAS films were investigated by UV–visible, X-ray photoelectron (XPS), and Raman spectroscopies, as well as atomic force microscopy and sheet resistance measurements. The elimination of network silicon is evidenced in the changes of XPS. The correlation between Raman spectroscopy analysis and sheet resistance exhibit the formation of graphite films. •Fabrication of graphite films by intense pulsed light irradiation•Conditions of intense pulsed light irradiation•Use of Raman and X-ray photoelectron spectroscopy to monitor structural changes•Investigation of the morphological changes using AFM
ISSN:0040-6090
1879-2731
DOI:10.1016/j.tsf.2019.137422