Effect of electrode material on resistive switching memory behavior of solution-processed resistive switches: Realization of robust multi-level cells

• Published in: Thin solid films Vol. 625; pp. 87 - 92
• Main Authors: Jang, Jaewon, Subramanian, Vivek
• Format: Journal Article
• Language: English
• Published: Elsevier B.V 01.03.2017
• Subjects: Multi level; Resistive random access memories; Sol-gel; Zirconium dioxide; ZrO2; ZrO2; Multi level; Zirconium dioxide; Sol-gel; Resistive random access memories
• ISSN: 0040-6090; 1879-2731
• DOI: 10.1016/j.tsf.2017.01.063

Sol-gel processed ZrO2 was used as the main active channel material for a resistive switching memory device implemented on Indium Tin oxide coated glass substrates. The memory properties of the deposited ZrO2 layers depended on the top electrode material. Inert Au top electrodes did not yield resistive switching memory properties, while Ag top electrodes provided conventional resistive switching memory properties, with sharp on and off switching operation. In contrast, Ti top electrodes provided smooth on and off switching operation, and modifying the pulse widths and voltages allowed good control over the resistivity. The fabricated Au/Ti/ZrO2/ITO systems exhibited four different resistance levels, and good multi level storage characteristics were observed for at least 104cycles without degradation. •ZrO2 main active layer was formed by a sol-gel process.•The memory properties of ZrO2 layers depended on the top electrode material.•Ag top contacts on ZrO2 layers can be engineered to realize single-level memory.•Ti top contacts on ZrO2 layers can be engineered to realize multi-level memory.