Wafer-scale MoS2 for P-type field effect transistor arrays and defects-related electrical characteristics

•Realizing wafer-scale fabrication of 3 to 10 layers MoS2 nanofilms.•Field effect transistor arrays with high uniformity were fabricated.•Doping mechanisms were analyzed by first principle calculation method. Because of their fascinating electrical/optoelectrical characteristics, two-dimensional mol...

Full description

Saved in:
Bibliographic Details
Published inThin solid films Vol. 732; p. 138798
Main Authors Wei, Junqing, Di, Xichao, Wang, Fang, Shan, Xin, Zhang, Baojun, Xin, Baojuan, Wang, Weihua, Song, Zhitang, Zhang, Kailiang
Format Journal Article
LanguageEnglish
Published Elsevier B.V 31.08.2021
Subjects
Online AccessGet full text

Cover

Loading…
More Information
Summary:•Realizing wafer-scale fabrication of 3 to 10 layers MoS2 nanofilms.•Field effect transistor arrays with high uniformity were fabricated.•Doping mechanisms were analyzed by first principle calculation method. Because of their fascinating electrical/optoelectrical characteristics, two-dimensional molybdenum disulphide (MoS2) attracts much attention recently. However, it is still a challenge to fabricate wafer-scale MoS2 nanofilms of controlled thickness and high quality and that, limits their application. Here, a two-step thermal vulcanization method is proposed to fabricate wafer-scale MoS2 nanofilms with different thicknesses (3-10 layers). The synthesized MoS2 nanofilms have high uniformity and good quality. Furthermore, back gate field effect transistor (FET) arrays were fabricated based on these wafer-scale MoS2 nanofilms. The FET devices showed good electrical performance, mobility in the range of 0.44 ~ 0.96 cm2V−1s−1 and on/off ratio of ~103. Here, first-principle calculation was used to analyse the different types of defects observed in the tri-layer MoS2, the doping effects induced by the defects were also discussed. This work provides a reliable way to fabricate wafer-scale MoS2 nanofilms and give a detailed study of the electrical properties of multilayers MoS2 nanofilms paving the way for the manufacture of two-dimensional semiconductor materials.
ISSN:0040-6090
1879-2731
DOI:10.1016/j.tsf.2021.138798