Wafer-scale MoS2 for P-type field effect transistor arrays and defects-related electrical characteristics
•Realizing wafer-scale fabrication of 3 to 10 layers MoS2 nanofilms.•Field effect transistor arrays with high uniformity were fabricated.•Doping mechanisms were analyzed by first principle calculation method. Because of their fascinating electrical/optoelectrical characteristics, two-dimensional mol...
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Published in | Thin solid films Vol. 732; p. 138798 |
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Main Authors | , , , , , , , , |
Format | Journal Article |
Language | English |
Published |
Elsevier B.V
31.08.2021
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Subjects | |
Online Access | Get full text |
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Summary: | •Realizing wafer-scale fabrication of 3 to 10 layers MoS2 nanofilms.•Field effect transistor arrays with high uniformity were fabricated.•Doping mechanisms were analyzed by first principle calculation method.
Because of their fascinating electrical/optoelectrical characteristics, two-dimensional molybdenum disulphide (MoS2) attracts much attention recently. However, it is still a challenge to fabricate wafer-scale MoS2 nanofilms of controlled thickness and high quality and that, limits their application. Here, a two-step thermal vulcanization method is proposed to fabricate wafer-scale MoS2 nanofilms with different thicknesses (3-10 layers). The synthesized MoS2 nanofilms have high uniformity and good quality. Furthermore, back gate field effect transistor (FET) arrays were fabricated based on these wafer-scale MoS2 nanofilms. The FET devices showed good electrical performance, mobility in the range of 0.44 ~ 0.96 cm2V−1s−1 and on/off ratio of ~103. Here, first-principle calculation was used to analyse the different types of defects observed in the tri-layer MoS2, the doping effects induced by the defects were also discussed. This work provides a reliable way to fabricate wafer-scale MoS2 nanofilms and give a detailed study of the electrical properties of multilayers MoS2 nanofilms paving the way for the manufacture of two-dimensional semiconductor materials. |
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ISSN: | 0040-6090 1879-2731 |
DOI: | 10.1016/j.tsf.2021.138798 |