Reliability of MOCVD grown AlGaAs/GaAs laser diodes at -20 C heatsink temperature

Wide-stripe 808-nm laser diodes operated at constant current and at a heatsink temperature of -20 C for over 10000 h are discussed. The MOCVD-grown double-heterostructure lasers were processed with 60- mu m-wide oxide stripes and 150- mu m-long high-reflectivity passivated cavities. Devices were mou...

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Bibliographic Details
Published inIEEE photonics technology letters Vol. 2; no. 5; pp. 316 - 318
Main Authors Begley, D.L., Dreisewerd, D., Fritz, W., Schwedt, S., Elliott, G., Langill, T., Luft, J., Wudy, E.
Format Journal Article
LanguageEnglish
Published IEEE 01.05.1990
Subjects
Diode lasers
Gallium arsenide
Laser excitation
MOCVD
Optical arrays
Phased arrays
Power generation
Pump lasers
Semiconductor laser arrays
Temperature
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Summary:Wide-stripe 808-nm laser diodes operated at constant current and at a heatsink temperature of -20 C for over 10000 h are discussed. The MOCVD-grown double-heterostructure lasers were processed with 60- mu m-wide oxide stripes and 150- mu m-long high-reflectivity passivated cavities. Devices were mounted p-side down on BeO heatsinks with indium solder. Based on gradual degradation of output power (approximately 8*10/sup -5/ mW per kilohour), a median lifetime of over 30 years is projected.< >
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:1041-1135
1941-0174
DOI:10.1109/68.54691