Electrochemical performances investigation of bismuth selenide Bi2Se3 layer for capacitors application

• Published in: Thin solid films Vol. 777; p. 139905
• Main Authors: Haimer, C. El, Lghazi, Y., Youbi, B., Aynaou, A., Bahar, J., Himi, M. Ait, Sahlaoui, A., Bimaghra, I.
• Format: Journal Article
• Language: English
• Published: Elsevier B.V 31.07.2023
• Subjects: Bismuth selenide; Capacitor; Cyclic voltammetry; Electrochemistry; Electrodeposition; Thin films; Thin films; Cyclic voltammetry; Electrochemistry; Electrodeposition; Bismuth selenide; Capacitor
• ISSN: 0040-6090; 1879-2731
• DOI: 10.1016/j.tsf.2023.139905

•Bi2Se3 layers were prepared on the ITO substrate through the electrodeposition method.•Structural, compositional, and morphological characterization of Bi2Se3 was studied.•The electrochemical performance shows that the Bi2Se3 films can be used for energy storage.•Maximum specific capacitance of 66.3 mF g−1 obtained at a current density of 2 mA g−1. Bismuth selenide (Bi2Se3) layers have proved useful as electrode materials for capacitors. This material was prepared via electrodeposition method with the different deposition time and characterized by X-ray diffraction, Scanning electron microscopy, and Energy dispersive X-ray spectroscopy techniques. It is found that the films of Bi2Se3 provoke the formation of a biphasic, orthorhombic and rhombohedral crystal structure, with uniform spherical particles. Furthermore, the electrochemical properties of Bi2Se3 were investigated using cyclic voltammetry, chronopotentiometry, and electrochemical impedance spectroscopy in 1 M HNO3 aqueous electrolyte. Galvanostatic charge-discharge measurements deliver a specific capacitance of 49.7 mF g−1 which leads to a specific energy density of 0.0034 Wh kg−1 and specific power of up to 5 kW kg−1 at a current of 0.01 A g−1. The electrochemical impedance data were fitted with an equivalent circuit containing a constant phase element and fitted parameters were calculated.