Influence of electrical modes on radiation sensitivity of hydrogen sensors based on Pd-Ta2O5-SiO2-Si structures

The influence of the circuit’s electric modes on the radiation sensitivity of hydrogen sensors based on the metal-insulator-semiconductor field-effect transistor with structure Pd-Ta2O5-SiO2-Si (MISFET) was researched. There were measured the hydrogen responses of output voltages V of the MISFET-bas...

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Bibliographic Details
Published inSensors and actuators. B, Chemical Vol. 273; pp. 999 - 1007
Main Authors Podlepetsky, B., Kovalenko, A, Nikiforova, M.
Format Journal Article
LanguageEnglish
Published Elsevier B.V 10.11.2018
Subjects
Electric modes
Hydrogen sensors
MISFET
Radiation
Sensitivity
Sensitivity
Hydrogen sensors
Electric modes
MISFET
Radiation
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Summary:The influence of the circuit’s electric modes on the radiation sensitivity of hydrogen sensors based on the metal-insulator-semiconductor field-effect transistor with structure Pd-Ta2O5-SiO2-Si (MISFET) was researched. There were measured the hydrogen responses of output voltages V of the MISFET-based circuits at different gate voltages before and after electron irradiations. The voltages V as functions of hydrogen concentration C were determined for different ionizing doses D. Models of influence of the electric modes on the radiation sensitivity of sensors were based on experimental dependencies of V(C, D). The recommendations for the optimal choice of MISFET-based circuit’s electric modes were formulated.
ISSN:0925-4005
1873-3077
DOI:10.1016/j.snb.2018.06.107