Tetranuclear yttrium and gadolinium 2-acetylcyclopentanoate clusters: Synthesis and their use as spin-coating precursors for metal oxide film formation for field-effect transistor fabrication

• Published in: Journal of rare earths Vol. 36; no. 10; pp. 1098 - 1105
• Main Authors: Pousaneh, Elaheh, Preuβ, Andrea, Assim, Khaybar, Rüffer, Tobias, Korb, Marcus, Tittmann-Otto, Jana, Hermann, Sascha, Schulz, Stefan E., Lang, Heinrich
• Format: Journal Article
• Language: English
• Published: Elsevier B.V 01.10.2018
• Subjects: CNT transistor; Gadolinium; Spin coating; Thermal analysis; Yttrium; β-Diketonates; Gadolinium; β-Diketonates; Thermal analysis; Yttrium; Spin coating; CNT transistor
• ISSN: 1002-0721; 2509-4963
• DOI: 10.1016/j.jre.2018.02.010

Lanthanide clusters [Ln4(μ3-OH)2(η2-accp)4((μ-O)-η2-accp)6] (Ln = Y (4), Gd (5); accp = 2-acetylcyclopentanoate) are accessible by treatment of [M(NO3)3·6H2O] (M = Y (1), Gd (2)) with 3 equiv. of Haccp (3) in presence of NaOH. The molecular structures of 4 and 5 in the solid-state are discussed. The thermal behavior of 4 and 5 was studied by TG under Ar and O2, showing multistep decomposition processes. Additionally, DSC studies were carried out under an atmosphere of O2. PXRD measurements of the TG residues confirm the formation of Ln2O3. Spin-coating experiments were carried out with 4 and 5 for Ln2O3 film deposition on silicon substrates. The layers are smooth, close and are of thicknesses of 18.87 ± 1.13 nm and 25.59 ± 4.55 nm for Ln = Y and Gd, which was evidenced by SEM and EDX studies. Field-effect transistors were successfully fabricated by deposition of carbon nanotubes on top of the Y2O3 films and formation of palladium contacts by a lift-off procedure. An on/off ratio of more than 4 orders of magnitude is achieved without considerable leakage currents. These results demonstrate the potential use of spin-coated Y2O3 as a gate dielectric in electronic devices. [Display omitted]