Non-volatile transistor memory fabricated using DNA and eliminating influence of mobile ions on electric properties

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Bibliographic Details
Published inJournal of materials chemistry Vol. 21; no. 39; p. 15575
Main Authors Yukimoto, Tomoyoshi, Uemura, Sei, Kamata, Toshihide, Nakamura, Kazuki, Kobayashi, Norihisa
Format Journal Article
LanguageEnglish
Published 01.01.2011
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ISSN:0959-9428
1364-5501
DOI:10.1039/c1jm12229k