Modeling organic thin-film transistors based on the virtual source concept: A case study

• Published in: Solid-state electronics Vol. 161; p. 107639
• Main Authors: Lima, Alex Anderson, Blawid, Stefan
• Format: Journal Article
• Language: English
• Published: Elsevier Ltd 01.11.2019
• Subjects: Compact model; Emission-diffusion theory; Organic thin-film transistor; Virtual source; Virtual source; Emission-diffusion theory; Compact model; Organic thin-film transistor
• ISSN: 0038-1101; 1879-2405
• DOI: 10.1016/j.sse.2019.107639

•A novel compact DC model of organic thin-film transistors is suggested.•Diffusive charge emission from a virtual source is a suitable concept for TFT modeling.•Charge trapping has a similar effect as a gate bias dependent mobility.•A pronounced linear output curve at low drain bias points to a large serial resistance.•DC characteristics of OTFTs yield informations about the carrier mean free path. We apply the virtual source concept to describe the DC current-voltage characteristics of organic thin-film transistors. The draining of charge carriers from the virtual source is calculated using emission-diffusion theory. The electrical characteristics of organic thin-film transistors are commonly analyzed employing a drift mobility that is enhanced by the transistor overdrive. One possible origin of such a mobility model is charge trapping. We show that the direct parametrization of the fraction of mobile to total charges including trapped ones allows for a straight forward adaptation of the virtual-source emission-diffusion theory to organic electronics capable of describing measured transfer and output curves with a small number of parameters. The resulting model offers an alternative parametrization of well-known bias and temperature dependences. Beyond others, a limited charge injection does not arise from the high-field bulk saturation velocity but from the unidirectional thermal velocity and the charge carrier mean free path is a critical model parameter. Moreover, diffusivity replaces the drift mobility as the current scaling factor, which would lead to slightly different predictions for the current-voltage curves in the case that the Einstein relation is not valid.